Briefly describe the following operations for Shaanxi single crystal furnace:

Furnace cleaning and loading

Evacuation, inflation, preheating

Chemical and crystal inducing

Growth neck

Shoulder expansion and nitrogen filling

Shoulder rotation, holding, and gripper release

Closing, shutdown, cleaning, and loading

Shaanxi single crystal furnace manufacturer

Single crystal furnace is a device that uses a graphite heater to melt polycrystalline materials such as silicon in an inert gas (mainly nitrogen and helium) environment, and grows dislocated single crystals using the Czochralski method.

The diameter of a single crystal can be influenced by factors such as temperature, pulling speed and rotational speed, crucible tracking speed and rotational speed, and the flow rate of protective gas during the growth process. The temperature mainly determines whether the crystal can be formed, while the speed directly affects the internal quality of the crystal, which can only be detected after the single crystal is pulled out.

The thermal field with proper temperature distribution not only makes the single crystal grow smoothly, but also has high quality. If the temperature distribution of the thermal field is not very reasonable, it is easy to produce various defects in the process of growing the single crystal, which affects the quality. If the situation is serious, the single crystal cannot be grown due to the phenomenon of crystal transformation.