Firstly, high-purity polycrystalline silicon raw materials are placed in a high-purity quartz crucible and melted through the high temperature generated by a graphite heater; Then, slightly cool the melted silicon liquid to produce a certain degree of undercooling, and insert a single silicon crystal (called a seed crystal) fixed on the seed crystal axis into the surface of the melt. After the seed crystal melts with the melt, slowly pull the seed crystal upwards, and the crystal will grow at the lower end of the seed crystal; Then, the seed crystal is controlled to grow a thin neck with a length of about 100 mm and a diameter of 3~5 mm, which is used to eliminate the dislocation of atomic arrangement caused by the strong Thermal shock of high-temperature solution on the seed crystal. This process is crystal introduction; Subsequently, amplify the crystal diameter to the size required by the process, usually 75-300mm, and this process is called shoulder placement; Then, suddenly increase the pulling speed to perform a shoulder rotation operation, making the shoulders approximately at right angles; Then, by entering the equal diameter process and controlling the thermal field temperature and crystal lifting speed, a single crystal column with a certain diameter specification size is grown Afterwards, when most of the silicon solution has completed crystallization, the crystal is gradually reduced to form a tail shaped cone, which is called the tailing process. This single crystal drawing process is basically completed, and after a certain amount of insulation and cooling, it can be taken out.

Manufacturer of monocrystalline silicon growth furnace

The Czochralski method, also known as the J. Czochralski method. This method was established by Cheklowski in 1917 as a crystal growth method. The equipment and process for growing single crystals using the Czochralski method are relatively simple, easy to achieve automatic control, high production efficiency, easy to prepare large diameter single crystals, easy to control impurity concentration in the single crystals, and can prepare low resistivity single crystals. According to statistics, 70% to 80% of the production of silicon single crystals on * * is produced by the Czochralski method.